?2008 ixys all rights reserved 1 - 4 20080523d ixkh 20n60c5 ixkp 20n60c5 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t vj = 25 c, unless otherwise speci ed) min. typ. max. r dson v gs = 10 v; i d = 10 a 180 200 m v gs(th) v ds = v gs ; i d = 1.1 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25? t vj = 125? 10 1 a ? i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 1520 72 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 10 a 32 8 11 45 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 400 v i d = 10 a; r g = 3.3 10 5 50 5 ns ns ns ns r thjc 0.60 k/w i d25 = 20 a v dss = 600 v r ds(on) max = 0.2 coolmos ? 1) power mosfet features ?fast coolmos 1) power mosfet - 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness ?enhanced total power density applications ?switched mode power supplies (smps) ?uninterruptible power supplies (ups) ?power factor correction (pfc) ?welding ?inductive heating ?pdp and lcd adapter mosfet symbol conditions maximum ratings v dss t vj = 25? 600 v v gs 20 v i d25 i d90 t c = 25? t c = 90? 20 13 a a e as e ar single pulse repetitive 435 0.66 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 5 0 v/ns d g s n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge i d = 6.6 a; t c = 25? 1) coolmos is a trademark of in neon technologies ag. to-220 ab (ixkp) g d s to-247 ad (ixkh) g d s q d(tab)
?2008 ixys all rights reserved 2 - 4 20080523d ixkh 20n60c5 ixkp 20n60c5 ixys reserves the right to change limits, test conditions and dimensions. source-drain diode symbol conditions characteristic values (t vj = 25?, unless otherwise speci ed) min. typ. max. i s v gs = 0 v 10 a v sd i f = 10 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 10 a; -di f /dt = 100 a/?; v r = 400 v 340 5.5 33 ns ? a component symbol conditions maximum ratings t vj t stg operating -55...+150 -55...+150 ? ? m d mounting torque to-247 to-220 0.8 ... 1.2 0.4 ... 0.6 nm nm symbol conditions characteristic values min. typ. max. r thch with heatsink compound to-247 to-220 0.25 0.50 k/w k/w weight to-247 to-220 6 2 g g
?2008 ixys all rights reserved 3 - 4 20080523d ixkh 20n60c5 ixkp 20n60c5 ixys reserves the right to change limits, test conditions and dimensions. dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 g c d f b h a j k l q r e n m to-220 ab outline fig. 1 power dissipation fig. 2 typ. output characteristics fig. 3 typ. output characteristics 04080120160 0 50 100 150 200 250 t c [ c] p tot [w] to-247 ad outline 4.5 v 5v 5.5 v 6v 7v 8v 10 v 20 v 0 15 30 45 60 75 0 5 10 15 20 v ds [v] i d ] a [ 4.5 v 5v 5.5 v 6v 7v 8v 10 v 20 v 0 5 10 15 20 25 30 35 05101520 v ds [v] i d ] a [ t j = 25c v gs = v gs = t j = 125c symbol inches millimeters min max min max a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e0.215bsc5.46bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ?p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s0.242bsc6.14bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ?p1 - 0.291 - 7.39
?2008 ixys all rights reserved 4 - 4 20080523d ixkh 20n60c5 ixkp 20n60c5 ixys reserves the right to change limits, test conditions and dimensions. 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v ) s s d ( r b ] v [ 0 100 200 300 400 500 20 60 100 140 180 t j [c] e s a ] j m [ typ 98 % 0 0.1 0.2 0.3 0.4 0.5 0.6 -60 -20 20 60 100 140 180 t j [c] r ) n o ( s d [ ] 25 c 150 c 0 20 40 60 80 02 4 6 810 v gs [v] i d ] a [ 6.5 v 7v 10 v 0 0.2 0.4 0.6 0.8 1 1.2 0 10203040 i d [a] r ) n o ( s d [ ] 5v 5.5 v 6v 12 0v 40 0v 0 1 2 3 4 5 6 7 8 9 10 010203040 q gate [nc] v s g ] v [ 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f ] a [ ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c] f p [ single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z c j h t ] w / k [ v ds = t jv = 150c i d = 10 a v gs = 10 v v ds > 2 r ds(on) max i d t j = t j = v ds = 120 v v gs = 0 v f = 1 mhz i d = 6.6 a i d = 0.25 ma d = t p /t i d = 10 a pulsed fig. 5 drain-source on-state resistance fig. 4 typ. drain-source on-state resistance characteristics of igbt fig. 7 forward characteristic of reverse diode fig. 8 typ. gate charge fig. 10 avalanche energy fig. 11 drain-source breakdown voltage fig. 6 typ. transfer characteristics fig. 9 typ. capacitances fig. 12 max. transient thermal impedance
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